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| BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data * Cascadable 50 -gain block * 9 dB typical gain at 1.0 GHz * 9 dBm typical P -1dB at 1.0 GHz * 3 dB-bandwidth: DC to 2.4 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0041 Pin Configuration Package BGA 310 BLs Maximum Ratings Parameter Device current 1 RFout/bias 2 GND 3 RF input 4 GND SOT-143 Symbol Value 60 250 10 150 -65 ...+150 -65 ...+150 Unit mA mW dBm C ID Ptot PRFin Tj TA T stg 1) Total power dissipation, T S 99 C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BGA 310 Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (VD = 4.7 V, Zo = 50 ) Insertion power gain |S21| 2 |S 21|2 10 9 8 +-0.5 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 6 6.5 7 9 20 15 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compression point P-1dB RL in RL out f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias D RFC (optional) 4 3 2 EHA07313 Semiconductor Group Semiconductor Group 22 C Block IN 1 C Block VD OUT RBias = VCC - VD / ID VD = 4.7V Sep-04-1998 1998-11-01 BGA 310 S-Parameters at T A = 25 C f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VD = 4.7 V, Z o = 50 0.01 0.051 176.4 0.1 0.053 168.1 0.3 0.053 141.9 0.5 0.058 123.9 0.8 0.054 98.2 1 0.049 86.1 1.8 0.053 -164.9 2.4 0.161 -177.7 3 0.257 153.9 3.22 3.23 3.22 3.2 3.17 3.12 2.79 2.41 2.03 179.3 174.9 164.6 154.2 138.7 128.4 88 60.8 38.2 0.149 0.149 0.15 0.152 0.157 0.162 0.188 0.208 0.225 0.2 1.2 3.4 5.4 8.1 9.7 12 10.6 8.2 0.159 0.158 0.157 0.155 0.153 0.153 0.16 0.168 0.178 -0.5 -6.1 -19 -31.7 -51.3 -64.3 -106.6 -123.7 -133.1 Insertion power gain |S21|2 = f ( f ) Noise figure NF = f ( f ) VD = 4.7 V, ID = 42 mA 25 VD = 4.7 V, ID = 42 mA 10 dB dB |S21|2 15 NF 0 1 6 10 4 5 2 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 BGA 310 Output power 1-dB-gain compression P-1dB = f ( f ) VD = 4.7 V, I D = 42 mA 25 dBm P -1dB 15 10 5 0 -1 10 10 0 GHz 10 1 f Semiconductor Group Semiconductor Group 44 Sep-04-1998 1998-11-01 |
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